preliminary solid state devices, inc. STX7905 features: data sheet #: tr0006a maximum ratings symbol units value v ebo 6 volts emitter-base voltage v cbo 600 volts collector-base voltage i c 1 collector current collector-emitter voltage r be = 1 kohms v ceo v cer 450 600 amps volts watts mw/ o c ?bv cbo 600v. ? fast switching. ? low leakage. ? low saturation voltage. ? 200 o c operating, gold eutectic die attach. ? designed for complementary use with stx6905. to-59 case outline: to-59 pin out: 1 - collector 2 - base 3 - emmiter 1 amp 600 volts npn transistor total device dessipation @ t c = 25 o c derate above 25 o c p d 20 133 i b 0.5 base current amps designer's data sheet 14005 stage road * santa fe springs, ca 90670 phone: (562) 404-4474 * fax: (562) 404-1773 note: all specifications are subject to change without notification. scd's for these devices should be reviewed by ssdi prior to release. o c operating and storage temperature t j, t stg -65 to +200 o c/w thermal resistance, junction to case r 1 jc 7.5
solid state devices, inc. STX7905 preliminary v dc 450 600 - bv ceo bv cer collector-emitter breakdown voltage* v 600 - collector-base breakdown voltage (i c = 100ua dc ) v 6- bv ebo emitter-base breakdown voltage (i e = 20ua dc ) : a -1 i cbo collector cutoff current (v cb = 600v dc ) 14005 stage road * santa fe springs, ca 90670 phone: (562) 404-4474 * fax: (562) 404-1773 min max electrical characteristics symbol units dc current gain* 40 40 30 0.5 collector-emitter saturation voltage* (i c = 25ma dc, i b = 2.5ma dc ) v ce(sat) v dc h fe base-emitter saturation voltage* (i c = 25ma dc, i b = 2.5ma dc ) 1.0 v dc v be(sat) current gain bandwidth product (i c = 50ma dc , v ce = 10v dc, f = 1mhz) 25 - mhz ft 15 pf output capacitance (v cb = 30v dc , i e = 0a dc, f = 1.0mhz) - c ob *pulse test: pulse width = 300us, duty cycle = 2% bv cbo (i c = 1ma dc; v ce = 10v dc ) (i c = 25ma dc; v ce = 10v dc ) (i c = 100ma dc; v ce = 15v dc ) - - 200 200 - ( i c = 1 ma dc) (i c = 100 : a dc ; r be = 1k s ) : a -1 i ebo emmiter cutoff current (v eb = 6v dc )
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